A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
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235 results for Keith A. Jenkins
An ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
High performance 0.1μm nMOSFET's with 10 ps/stage delay (85 K) at 1.5 V power supply
- Y. Mii
- S. Rishton
- et al.
- 1993
- VLSI Technology 1993
High performance complementary bipolar technology
- J. Warnock
- J.D. Cressler
- et al.
- 1993
- VLSI Technology 1993
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
Perimeter effects in small geometry bipolar transistors
- Wai Lcc
- Jack Y.-C. Sun
- et al.
- 1992
- VLSI Technology 1992
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- ESSDERC 1991
Low temperature 12 ns DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- VLSI-TSA 1989
Low temperature SER and noise in a high speed DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- Workshop on Low Temperature Semiconductor Electronics 1989