Conference paper
Silicon RF technology - The two generic approaches
Joachim N. Burghartz
ESSDERC 1997
A 10.5- to 11-GHz fully monolithic voltage controlled dilator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of O to 3 V. The circuit draws less than 8 niA from a 3-V supply including the reference branch bias current.
Joachim N. Burghartz
ESSDERC 1997
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE T-MTT
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