Conduction-band and surface-state critical points in Si: An inverse-photoemission study
- D. Straub
- L. Ley
- et al.
- 1985
- Physical Review Letters
Paper
Publications
218 results for F.J. Himpsel
Unoccupied surface state and conduction band critical points of GaP(110): A high resolution inverse photoemission study
- D. Straub
- M. Skibowski
- et al.
- 1985
- JVSTA
PaperSymmetrization of the trimer model for Si(111) 7×7
- F.J. Himpsel
- Inder P. Batra
- 1985
- Solid State Communications
PaperNormal-incidence grating spectrograph with large acceptance for inverse photoemission
- Th. Fauster
- D. Straub
- et al.
- 1985
- Review of Scientific Instruments
PaperINVERSE PHOTOEMISSION AT SEMICONDUCTOR SURFACES.
- F.J. Himpsel
- D. Straub
- et al.
- 1984
- ICPS Physics of Semiconductors 1984
Conference paperCore-level shifts and oxidation states of Ta and W: Electron spectroscopy for chemical analysis applied to surfaces
- F.J. Himpsel
- J.F. Morar
- et al.
- 1984
- Physical Review B
PaperSynchrotron photoemission investigation: Fluorine on silicon surfaces
- J.F. Morar
- F.R. McFeely
- et al.
- 1984
- Applied Physics Letters
PaperProbing the transition layer at the SiO2-Si interface using core level photoemission
- G. Hollinger
- F.J. Himpsel
- 1984
- Applied Physics Letters
PaperOxidation of GaAs(110): New results and models
- G. Landgren
- R. Ludeke
- et al.
- 1984
- Physical Review B
PaperStructure analysis of Si(111)2 1 with low-energy electron diffraction
- F.J. Himpsel
- P.M. Marcus
- et al.
- 1984
- Physical Review B
Paper