S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Surface-sensitive core-level photoelectron spectra are presented for surface oxide phases of Ta and W in the monolayer range. Discrete chemically shifted core levels are observed which are up to 5 times sharper than in bulk oxides. A simple model is proposed for explaining the wealth of corelevel shifts in terms of discrete oxidation states. Application of concepts from electron spectroscopy for chemical analysis yields a chemical shift of 0.42 eV per metal oxygen bond for surface oxide phases. With this interpretation, Ta exhibits predominantly odd oxidation states (1,3,5) and W even oxidation states (2,4,6). In addition to the chemical shift, a relaxation shift of 2-3 eV has to be included for insulating oxides which accounts for the lack of metallic screening. Discrete configurations with characteristic core-level intensities and shifts are found in Ta. © 1984 The American Physical Society.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
T.N. Morgan
Semiconductor Science and Technology
J.H. Stathis, R. Bolam, et al.
INFOS 2005
K.N. Tu
Materials Science and Engineering: A