Robustness of ultrathin aluminum oxide dielectrics on Si(001)

The stability of Al2O3 films during thermal processing will help determine their usefulness as an alternative gate dielectric for advanced complementary metal-oxide-semiconductor devices. We used medium energy ion scattering and atomic force microscopy to examine the degradation of ultrathin Al2O3 layers under ultrahigh vacuum annealing and the effects of low-temperature oxidation. No degradation is observed at 900 °C, but voids appear at higher temperatures. Growth of interfacial SiO2 takes place during low-pressure oxidation at 600 °C, which may limit the capacitance of extremely thin structures. © 2001 American Institute of Physics.