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Transistor-limited constant voltage stress of gate dielectrics
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Review
Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
Abstract
The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).
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