Conference paper
The dielectric breakdown in gate oxides under high field stress
S. Lombardo, J.H. Stathis, et al.
ECS Meeting 2009
The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).
S. Lombardo, J.H. Stathis, et al.
ECS Meeting 2009
J.H. Stathis, R. Bolam, et al.
INFOS 2005
J.H. Stathis, L. Dori
Applied Physics Letters
G. Hougham, G. Tesoro, et al.
Macromolecules