J.H. Stathis
Microelectronic Engineering
The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).
J.H. Stathis
Microelectronic Engineering
M.J. Uren, V. Nayar, et al.
JES
D.J. DiMaria, J.H. Stathis
Journal of Applied Physics
E.A. Irene, E. Tierney, et al.
Applied Physics Letters