IIIB-5 Fabrication of Thin Gate Oxide MOSFET’s Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO2

Paper

01 Jan 1987

IIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO₂

No abstract available.

Paper

J. Batey, S.L. Wright, et al.

Journal of Applied Physics

Paper

J. Batey, S.L. Wright

Journal of Applied Physics

Paper

E.A. Irene, N.J. Chou, et al.

JES

Review

J.H. Stathis, J. Chapple-Sokol, et al.

Applied Physics Letters