IIIB-5 Fabrication of Thin Gate Oxide MOSFET’s Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO2

Paper

01 Jan 1987

IIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO₂

No abstract available.

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A.A. Bright, J. Batey, et al.

Applied Physics Letters

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Journal of Applied Physics

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J. Batey, E. Tierney

Journal of Applied Physics

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Physical Review B