Publications

18 results for J. Batey

Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/SiO₂ interfaces
- - A.A. Bright
  - J. Batey
  - et al.
- 1991
- Applied Physics Letters
Low hydrogen content stoichiometric silicon nitride films deposited by plasma-enhanced chemical vapor deposition
- - G.N. Parsons
  - J.H. Souk
  - et al.
- 1991
- Journal of Applied Physics
Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
- - J.H. Stathis
  - J. Chapple-Sokol
  - et al.
- 1991
- Applied Physics Letters
E' centers and nitrogen-related defects in SiO₂ films
- - J.H. Stathis
  - J. Chapple-Sokol
  - et al.
- 1990
- Applied Physics Letters
Properties and thermal stability of the SiO₂/GaAs interface with different surface treatments
- - A. Paccagnella
  - A.C. Callegari
  - et al.
- 1990
- Applied Physics Letters
High-Quality Deposited Gate Oxide MOSFET’s and the Importance of Surface Preparation
- - J.W. Stasiak
  - J. Batey
  - et al.
- 1989
- IEEE Electron Device Letters
Plasma-enhanced CVD of high quality insulating films
- - J. Batey
  - E. Tierney
  - et al.
- 1989
- Applied Surface Science
Thin-Film Transistors Incorporating a Thin, High-Quality PECVD SiO2 Gate Dielectric
- - D.A. Buchanan
  - J. Batey
  - et al.
- 1988
- IEEE Electron Device Letters
Unpinned GaAs MOS Capacitors and Transistors
- - Sandip Tiwari
  - Steven L. Wright
  - et al.
- 1988
- IEEE Electron Device Letters
Ballistic electron transport in thin silicon dioxide films
- - M.V. Fischetti
  - D.J. Dimaria
  - et al.
- 1987
- Physical Review B