Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 °C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 °C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 °C. © 2010 American Institute of Physics.