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Technical Digest-International Electron Devices Meeting
One-dimensional channels with 100 nm wide constrictions defined in inverted GaAs heterostructures by e-beam lithography display conductance oscillations which are strongly periodic in the electron density. These oscillations correspond to single electron charging of a segment isolated by a pair of potential barriers. © 1991.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
R.W. Gammon, E. Courtens, et al.
Physical Review B
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Zeitschrift fur Kristallographie - New Crystal Structures
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