S. Krishnan, U. Kwon, et al.
IEDM 2011
A comprehensive model is presented to analyze the three-dimensional (3-D) source-drain (S/D) resistance of undoped double-gated FinFETs of wide and narrow S/D width. The model incorporates the contribution of spreading, sheet, and contact resistances. The spreading resistance is modeled using a standard two-dimensional (2-D) model generalized to 3-D. The contact resistance is modeled by generalizing the one-dimensional (1-D) transmission line model to 2-D and 3-D with appropriate boundary conditions. The model is compared with the S/D resistance determined from 3-D device simulations and experimental data. We show excellent agreement between our model, the simulations, and experimental data. © 2009 IEEE.
S. Krishnan, U. Kwon, et al.
IEDM 2011
X. Yang, Kingsuk Maitra, et al.
IEEE International SOI Conference 2011
Jun Yuan, C. Gruensfelder, et al.
ICSICT 2010
X. Yang, Kingsuk Maitra, et al.
IEEE International SOI Conference 2011