D.S. Turaga, K. Ratakonda, et al.
SCC 2006
Extensive pattern customization will be necessary to realize viable circuit patterns from line-space arrays generated by block copolymer directed self assembly (DSA). In pattern customization with regard to chemical epitaxy of lamellar block copolymers, quantitative and precise knowledge of DSA-feature registration to the chemical prepattern is critical. Here we measure DSA pattern placement error for spatial frequency tripling and quadrupling indexed to specific lines in the chemical prepattern. A range of prepattern line widths where minimal DSA placement error can be expected is identified, and a positive correlation between DSA placement accuracy and prepattern uniformity is shown. Considering the experimental non-idealities present in the chemical prepatterns used in this work that arise from using electron-beam lithography, we anticipate that 3σ DSA placement errors will be at a minimal level if highly uniform chemical prepatterns produced by optical lithography are used. © 2012 Copyright SPIE.
D.S. Turaga, K. Ratakonda, et al.
SCC 2006
Simeon Furrer, Dirk Dahlhaus
ISIT 2005
Paul J. Steinhardt, P. Chaudhari
Journal of Computational Physics
A.R. Gourlay, G. Kaye, et al.
Proceedings of SPIE 1989