Implementing amine-based cleaning chemical for post CMP cleaning of Cu for BEOL interconnect and Hybrid bonding Applications

The current contribution presents a study on improving the device yield and reliability by implementing an advanced post CMP clean chemical at the back-end-of-the-line for Cu and liner materials for interconnect applications. In this study, cleaning performance was evaluated for various applications including Cu thin wires at 2nm technology nodes, Cu fat wires, and TSVs for hybrid bonding. The traditional TMAH-based post-CMP clean chemical used in the past 2 decades poses an adverse environmental effect and causes EHS and handling issues in the high-volume manufacturing environment. This study demonstrates the implementation of a non TMAH-based post CMP cleaning chemical with superior cleaning efficiency that improves device yield for advanced nodes and mitigates EHS and chemical handling concerns.