Implementation of assist features in EUV lithography
Fan Jiang, Martin Burkhardt, et al.
SPIE Advanced Lithography 2015
OPC models have become critical in the manufacturing of integrated circuits (ICs) by allowing correction of complex designs, as we approach the physical limits of scaling in IC chip design. The accuracy of these models depends upon the ability of the calibration set to sufficiently cover the design space, and be manageable enough to address metrology constraints. We show that the proposed method provides results of at least similar quality, in some cases superior quality compared to both the traditional method and sample plan sets of higher size. The main advantage of our method over the existing ones is that it generates a calibration set much faster, considering a large initial set and even more importantly, by automatically selecting its minimum optimal size.
Fan Jiang, Martin Burkhardt, et al.
SPIE Advanced Lithography 2015
David Demaris, Maria Gabrani, et al.
SPIE Advanced Lithography 2012
Christian Neuber, Hans-Werner Schmidt, et al.
SPIE Advanced Lithography 2015
Amr Abdo, Ian Stobert, et al.
SPIE Advanced Lithography 2008