Evaluation of High NA EUV for Subtractive Interconnect Patterning in Advanced Nodes

This work explores the challenges and capabilities for utilizing high-NA EUV lithography to pattern both damascene Cu interconnects and subtractive Ru interconnects. We explore potential solutions through OPC and mask optimization to enable patterning for similar structures for damascene and subtractive structures. A comparison of LER, defectivity and electrical characterization is done for a direct comparison between damascene and subtractive structures.