Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

In situ Auger electron spectroscopy of Si and SiO₂ surfaces plasma etched in CF₄-H₂ glow discharges

J.W. Coburn

Journal of Applied Physics

Paper

Summary Abstract: Diagnostics in plasma processing

J.W. Coburn

JVSTA

Review

Surface science aspects of etching reactions

Harold F. Winters, J.W. Coburn

Surface Science Reports

Paper

Conductance considerations in the reactive ion etching of high aspect ratio features

J.W. Coburn, Harold F. Winters

Applied Physics Letters

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Abstract

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In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges

Summary Abstract: Diagnostics in plasma processing

Surface science aspects of etching reactions

Conductance considerations in the reactive ion etching of high aspect ratio features

In situ Auger electron spectroscopy of Si and SiO₂ surfaces plasma etched in CF₄-H₂ glow discharges