Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

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Abstract

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Electron-beam effects in depth profiling measurements with Auger electron spectroscopy

A method for increasing the etch-rate ratio of oxides to nonoxides in inert-gas ion milling processes

Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density

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