Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Experimental and theoretical results are presented on the determination of distortion induced during the process of fabrication of X-ray lithography masks. The studies were performed on B-doped Si and on B-N-H mask substrates. © 1985.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
R. Ghez, J.S. Lew
Journal of Crystal Growth
John G. Long, Peter C. Searson, et al.
JES