T. Schneider, E. Stoll
Physical Review B
Paper
Distortion of masks for x-ray lithography
Abstract
Experimental and theoretical results are presented on the determination of distortion induced during the process of fabrication of X-ray lithography masks. The studies were performed on B-doped Si and on B-N-H mask substrates. © 1985.
Related
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024