Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature
- J.P. Conde
- K.K. Chan
- et al.
- 1993
- Journal of Applied Physics
Paper
Publications
32 results for M. Arienzo
Design considerations for high-density high-speed bipolar ROM
- Pong-Fei Lu
- Hyun J. Shin
- et al.
- 1993
- VLSI-TSA 1993
Conference paperDeposition of amorphous silicon using a tubular reactor with concentric-electrode confinement
- J.P. Conde
- K.K. Chan
- et al.
- 1992
- Journal of Applied Physics
PaperThe effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge
- J.P. Conde
- K.K. Chan
- et al.
- 1992
- Journal of Applied Physics
PaperSiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
Conference paperThin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopy
- L. Dori
- J. Bruley
- et al.
- 1991
- Journal of Applied Physics
PaperAdvanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
Conference paperSiGe alloys: growth, properties and applications
- Maurizio Arienzo
- Subramanian S. Iyer
- et al.
- 1991
- Applied Surface Science
PaperLow-temperature silicon cleaning via hydrogen passivation and conditions for epitaxy
- Subramanian S. Iyer
- M. Arienzo
- et al.
- 1990
- Applied Physics Letters
PaperSputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology
- L. Dori
- A.C. Megdanis
- et al.
- 1990
- Thin Solid Films
Paper