Single crystal emitter gap for epitaxial Si- and SiGe-base transistorsJ.H. ComfortE.F. Crabbeet al.1991IEDM 1991
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technologyJ.H. ComfortG.L. Pattonet al.1990IEDM 1990
Electrical characteristics of diodes fabricated in selective-epitaxial silicon wellsDavid HarameBarry Ginsberget al.1987Solid State Electronics
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.B.J. GinsbergM. Arienzoet al.1983ECS Meeting 1983