Huimei Zhou

Huimei Zhou received her Ph.D. degree in Electrical Engineering from University of California, Riverside, CA, USA in 2012, M.S. degree in Physics from Nanjing University, Nanjing, China in 2004 and B.S. degree in physics from Nanjing University, Nanjing, China in 2001. Dr. Zhou worked as a post doc in UIC, Process Integration Engineer in SMIC, shanghai, China, Global Foundries, Singapore and Samsung, Austin, USA. She joined IBM Research in 2015, working on novel devices and reliability. Huimei has been focused on Nanosheet FEOL/MOL reliability since 2019. She is highly skilled in the semiconductor processing and integration from 130nm to beyond 2nm, the physics of semiconductor degradation. In addition to her technical expertise, she has working with diverse teams innovating on the reliability qualification of advanced semiconductor devices and structures. She has 60+ journals/conferences and 80+ patent publications in the area of semiconductor devices, materials and reliability. Dr. Zhou served as the Technical Program Committee, the Session Chair of international conferences and Editor of peered review Journal, including IEEE International Electron Devices Meetings (IEDM), IEEE Electron Device Technology and Manufacturing (EDTM) and IEEE Transactions on Device and Materials Reliability (TDMR).