A high-speed silicon metal-semiconductor-metal photodetector fully integrable with (Bi)CMOS circuits
- E. Bassous
- M. Scheuermann
- et al.
- 1991
- IEDM 1991
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14 results at IEDM 1991
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Enhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 K
- L.K. Wang
- J. Seliskar
- et al.
- 1991
- IEDM 1991
Role of charge transport and trapping in the reliability of submicron polysilicon thin film transistors
- Frank R. Libsch
- Catherine Y. Wong
- et al.
- 1991
- IEDM 1991
Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure
- Hon-Sum Wong
- 1991
- IEDM 1991
Trench storage capacitors for high density DRAMs
- T.V. Rajeevakumar
- T. Lii
- et al.
- 1991
- IEDM 1991
Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress
- Keith A. Jenkins
- J.D. Cressler
- et al.
- 1991
- IEDM 1991