Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
Conference paper
Publications
14 results at IEDM 1991
Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
Conference paperUse of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress
- Keith A. Jenkins
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Conference paperA full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Conference paperLow thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Conference paperEnhanced performance of accumulation mode 0.5 μ m CMOS/SOI operated at 300 K and 85 K
- L.K. Wang
- J. Seliskar
- et al.
- 1991
- IEDM 1991
Conference paperProfile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Conference paperA novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991
Conference paperCharacterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
Conference paperTrench storage capacitors for high density DRAMs
- T.V. Rajeevakumar
- T. Lii
- et al.
- 1991
- IEDM 1991
Conference paper