Universality of short-channel effects in undoped-body silicon nanowire MOSFETs
- Sarunya Bangsaruntip
- Guy M. Cohen
- et al.
- 2010
- IEEE Electron Device Letters
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Characterization of "ultrathin-Cu"/Ru(Ta)/TaN liner stack for copper interconnects
- C.-C. Yang
- S. Cohen
- et al.
- 2010
- IEEE Electron Device Letters
Current scaling in aligned carbon nanotube array transistors with local bottom gating
- Aaron D. Franklin
- Albert Lin
- et al.
- 2010
- IEEE Electron Device Letters
Extraction of effective oxide thickness for SOI FINFETs with high-κ/Metal gates using the body effect
- Sujata Paul
- Frank Yeh
- et al.
- 2010
- IEEE Electron Device Letters
Characterization of selectively deposited cobalt capping layers: Selectivity and electromigration resistance
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- IEEE Electron Device Letters
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
Inability of single carrier tunneling barriers to give subthermal subthreshold swings in MOSFETs
- Paul M. Solomon
- 2010
- IEEE Electron Device Letters
Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons
- Qin Zhang
- Yeqing Lu
- et al.
- 2010
- IEEE Electron Device Letters
Enhanced via integration process for copper/ultralow-κ interconnects
- C.-C. Yang
- F. Chen
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters