Extraction of effective oxide thickness for SOI FINFETs with high-κ/Metal gates using the body effect

A methodology based on the transistor body effect is used to monitor inversion oxide thicknesses (Tinv's) in high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFETs. The extracted T inv's are benchmarked to independent capacitancevoltage (CV) measurements. For the first time, device simulation is introduced to understand the fundamental difference in Tinv values extracted using the two techniques, which is driven by the inversion charge centroid at different bias conditions. © 2010 IEEE.