The In-Ga-P Ternary Phase Diagram and Its Application to Liquid Phase Epitaxial Growth
- G.M. Blom
- 1971
- JES
Paper
Publications
509 results at JES
Thermodynamic Analysis of the lll-V Alloy Semiconductor Phase Diagrams: I. InSb-GaSb, InAs-GaAs, and InP-GaP
- L.M. Foster
- J.F. Woods
- 1971
- JES
PaperEpitaxial Growth of GaAsxP1-x from the Liquid Phase
- K.K. Shih
- 1970
- JES
PaperA Method for the Synthesis of BI3 for Use as a Dopant Source
- M. Berkenblit
- A. Reisman
- 1970
- JES
PaperHigh-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
- Billy L. Crowder
- John M. Fairfield
- 1970
- JES
PaperThe Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls
- L.H. Kaplan
- F.M. d'Heurle
- 1970
- JES
PaperThe Role of Damage in the Annealing Characteristics of Ion Implanted Si
- Billy L. Crowder
- 1970
- JES
PaperEffects of Material and Processing Parameters on the Dielectric Strength of Thermally Grown Si02 Films
- N.J. Chou
- J.M. Eldridge
- 1970
- JES
PaperAnomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers
- M. Berkenblit
- T.B. Light
- et al.
- 1970
- JES
PaperThe Solidus Boundary in the GaP-InP Pseudobinary System
- L.M. Foster
- J.E. Scardefield
- 1970
- JES
Paper