A Reduction Camera for Exposure of Microcircuitry onto WafersJ.S. WilcR.E. Tibbettset al.1968IEEE T-EDPaper
Ion Implantation Doping of Si with 70 to 300 keV B. P. and AsB.L. CrowderF. Fairfield1968IEEE T-EDPaper
Multilayer At03-Si02Combination (MASC) Films as a Partial H2 Diffusion Barrier for Use on Ge SurfacesThomas O. SedgwickJoseph A. Aboaf1968IEEE T-EDPaper
The Pressure Dependence of Barrier Heights in Ge-GaAs n-n HeterojunctionsW.E. HowardA.B. Fowleret al.1967IEEE T-EDPaper