PaperSubstrate bias effects on electron mobility in silicon inversion layers at low temperaturesA.B. FowlerPhysical Review Letters
Conference paperTEMPERATURE AND ELECTRIC FIELD DEPENDENCE OF HOPPING CONDUCTION IN A TWO DIMENSIONAL IMPURITY BAND.G. Timp, A.B. Fowler, et al.ICPS Physics of Semiconductors 1984
PaperProperties of semiconductor surface inversion layers in the electric quantum limitFrank Stern, W.E. HowardPhysical Review