PaperEffect of Minority Carrier Trapping on the Low-Temperature Characteristics of Si TransistorsW.P. DumkeIEEE T-ED
PaperMinority carrier injection and storage into a heavily doped emitter. Approximate solution for auger recombinationW.P. DumkeSolid-State Electronics
PaperPhotoluminescence in heavily doped Si: B and Si: AsP.E. Schmid, M.L.W. Thewalt, et al.Solid State Communications
