Reducing ground-bounce noise and stabilizing the data-retention voltage of power-gating structures
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- et al.
- 2008
- IEEE Transactions on Electron Devices
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139 results at IEEE Transactions on Electron Devices
Poly-Si thin-film transistors: An efficient and low-cost option for digital operation
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- 2007
- IEEE Transactions on Electron Devices
PaperA simulation study of the switching times of 22- and 17-nm gate-length SOI nFETs on high mobility substrates and Si
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- 2007
- IEEE Transactions on Electron Devices
PaperLow-power high-performance asymmetrical double-gate circuits using back-gate-controlled wide-tunable-range diode voltage
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- 2007
- IEEE Transactions on Electron Devices
PaperRandom dopant fluctuation in limited-width FinFET technologies
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- 2007
- IEEE Transactions on Electron Devices
PaperDevice-optimization technique for robust and low-power FinFET SRAM design in NanoScale era
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- 2007
- IEEE Transactions on Electron Devices
PaperUnderstanding Coulomb effects in nanoscale Schottky-barrier-FETs
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- 2007
- IEEE Transactions on Electron Devices
PaperThe impact of device footprint scaling on high-performance CMOS logic technology
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- 2007
- IEEE Transactions on Electron Devices
PaperBase charge dynamics of abrupt base-emitter junction HBTs and its representation in transistor models
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- D. Ritter
- 2007
- IEEE Transactions on Electron Devices
PaperLow thermal budget processing for sequential 3-D IC fabrication
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- 2007
- IEEE Transactions on Electron Devices
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