Keunwoo Kim, Ching-Te Chuang, et al.
IEEE Transactions on Electron Devices
In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally "undoped"silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The implication from RDF for design is also discussed. © 2007 IEEE.
Keunwoo Kim, Ching-Te Chuang, et al.
IEEE Transactions on Electron Devices
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
ICICDT 2006
Keunwoo Kim, Rajiv V. Joshi, et al.
Solid-State Electronics
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
IEEE Transactions on Electron Devices