Dependence of Electroluminescence Efficiency and Memory Effect on Mn Concentration in ZnS: Mn ACTEL Devices
- V. Marrello
- Aare Onton
- 1980
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
TA-A3 Retention Time Studies in Buried-Channel MOSFET Dynamic-Memory Devices
- H.H. Chao
- R.P. Havreluk
- 1980
- IEEE T-ED
PaperTP-A6 The Behavior of Schottky Barriers to GaAs as a function of Annealing Temperature
- H.J. Hovel
- C. Lanza
- 1980
- IEEE T-ED
PaperEffects of Impurity Compensation on Injection Current in Si Bipolar Transistors
- D.D. Tang
- Alwin E. Michel
- 1980
- IEEE T-ED
PaperEffect of Emitter Contact on Current Gain of Silicon Bipolar Devices
- Tak H. Ning
- Randall D. Isaac
- 1980
- IEEE T-ED
PaperHigh-Reliability Pb-Alloy Josephson Junctions for Integrated Circuits
- H.-C. Ward Huang
- Suryadevar Basavaiah
- et al.
- 1980
- IEEE T-ED
PaperNiobium Oxide-Barrier Tunnel Junction
- Stanley I. Raider
- Robert E. Drake
- et al.
- 1980
- IEEE T-ED
PaperApplication of Line-Edge Profile Simulation to Thin-Film Deposition Processes
- Andrew R. Neureuther
- Chiu H. Ting
- et al.
- 1980
- IEEE T-ED
PaperHeavy Doping Effects in p-n-p Bipolar Transistors
- D.D. Tang
- 1980
- IEEE T-ED
PaperSimulation of Impurity Freezeout Through Numerical Solution of Poisson's Equation with Application to MOS Device Behavior
- Richard C. Jaeger
- Fritz H. Gaensslen
- 1980
- IEEE T-ED
Paper