Niobium Oxide-Barrier Tunnel Junction
- Stanley I. Raider
- Robert E. Drake
- et al.
- 1980
- IEEE T-ED
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TP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure Source
- H. Rupprecht
- J. Woodall
- 1980
- IEEE T-ED
Partially Coherent Imaging in Two Dimensions and the Theoretical Limits of Projection Printing in Microfabrication
- Burn Jeng Lin
- 1980
- IEEE T-ED
Simulation of Impurity Freezeout Through Numerical Solution of Poisson's Equation with Application to MOS Device Behavior
- Richard C. Jaeger
- Fritz H. Gaensslen
- 1980
- IEEE T-ED
A Study of the Conversion Efficiency Limit of p+-i-n+ Silicon Solar Cells in Concentrated Sunlight
- Terry I. Chappell
- 1980
- IEEE T-ED
Application of Line-Edge Profile Simulation to Thin-Film Deposition Processes
- Andrew R. Neureuther
- Chiu H. Ting
- et al.
- 1980
- IEEE T-ED
Dependence of Electroluminescence Efficiency and Memory Effect on Mn Concentration in ZnS: Mn ACTEL Devices
- V. Marrello
- Aare Onton
- 1980
- IEEE T-ED
Effects of Impurity Compensation on Injection Current in Si Bipolar Transistors
- D.D. Tang
- Alwin E. Michel
- 1980
- IEEE T-ED
TA-A3 Retention Time Studies in Buried-Channel MOSFET Dynamic-Memory Devices
- H.H. Chao
- R.P. Havreluk
- 1980
- IEEE T-ED
TP-A6 The Behavior of Schottky Barriers to GaAs as a function of Annealing Temperature
- H.J. Hovel
- C. Lanza
- 1980
- IEEE T-ED