Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
- C. Sandow
- J. Knoch
- et al.
- 2009
- Solid-State Electronics
Paper
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108 results at Solid-State Electronics
Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure
- Seong-Dong Kim
- 2009
- Solid-State Electronics
PaperLow-frequency noise in buried-channel SiGe n-MODFETs
- Anuj Madan
- John D. Cressler
- et al.
- 2009
- Solid-State Electronics
PaperImpact of variability on the performance of SOI Schottky barrier MOSFETs
- S.F. Feste
- M. Zhang
- et al.
- 2009
- Solid-State Electronics
Paper45 nm/32 nm CMOS - Challenge and perspective
- Kazunari Ishimaru
- 2008
- Solid-State Electronics
PaperFinite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
- Dimitrios Tsamados
- Yogesh Singh Chauhan
- et al.
- 2008
- Solid-State Electronics
PaperA perspective on today's scaling challenges and possible future directions
- Robert H. Dennard
- Jin Cai
- et al.
- 2007
- Solid-State Electronics
PaperImpact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
- J. Knoch
- S. Mantl
- et al.
- 2007
- Solid-State Electronics
PaperA low voltage SANOS nonvolatile semiconductor memory (NVSM) device
- Yijie Zhao
- Xiaonan Wang
- et al.
- 2006
- Solid-State Electronics
PaperN-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
Paper