A Schottky-Barrier Diode With Self-Aligned Floating Guard RingC.T. ChuangMaurizio Arienzoet al.1984IEEE T-EDPaper
Temperature Dependence of FET Properties for Cr-Doped and LEC Semi-Insulating GaAs SubstratesThomas W. Hickmott1984IEEE T-EDPaper
Nonuniform Displacement of MOSFET Channel PinchoffSavvas G. ChamberlainAsim Husainet al.1984IEEE T-EDPaper
Method for Determining the Emitter and Base Series Resistances of Bipolar TransistorsTak H. NingDenny D. Tang1984IEEE T-EDPaper
IIIB-1 Degradation of 77-K MOSFET Characteristics Due to Channel Hot ElectronsJack Y. C. SunMatthew R. Wordeman1984IEEE T-EDPaper
Threshold and Sheet Concentration Sensitivity of High Electron Mobility TransistorsSandip Tiwari1984IEEE T-EDPaper
IIIA-5 Two-Dimensional Simulation of HEMT and GaAs Gate Heterojunction FETJ.Y.-F. Tang1984IEEE T-EDPaper