Hussein I. Hanafi, Robert H. Dennard, et al.
IEEE Journal of Solid-State Circuits
The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of 1/4μm channel length and minimum lithography dimension is projected. © 1984 IEEE
Hussein I. Hanafi, Robert H. Dennard, et al.
IEEE Journal of Solid-State Circuits
Jin Cai, Yuan Taur, et al.
VLSI Technology 2002
Cai Jin, David J. Frank, et al.
VLSI-TSA 2007
Ghavam G. Shahidi, Carl A. Anderson, et al.
IEEE Transactions on Electron Devices