George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of 1/4μm channel length and minimum lithography dimension is projected. © 1984 IEEE
George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
Wilfried Haensch, Edward J. Nowak, et al.
IBM J. Res. Dev
Ghavam G. Shahidi, Carl A. Anderson, et al.
IEEE Transactions on Electron Devices
Leland Chang, David J. Frank, et al.
Proceedings of the IEEE