Intrinsic effective mobility extraction with extremely scaled gate dielectrics
- Zuoguang Liu
- Dechao Guo
- et al.
- 2010
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
A scanning microcavity for in situ control of single-molecule emission
- C. Toninelli
- Y. Delley
- et al.
- 2010
- Applied Physics Letters
PaperGraphene field-effect transistors with self-aligned gates
- Damon B. Farmer
- Yu-Ming Lin
- et al.
- 2010
- Applied Physics Letters
PaperIn situ evolution of stress gradients in Cu films induced by capping layers
- Conal E. Murray
- Paul R. Besser
- et al.
- 2010
- Applied Physics Letters
PaperStructural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- Chiara Marchiori
- Ed Kiewra
- et al.
- 2010
- Applied Physics Letters
PaperLarge scale computer simulations of strain distribution and electron effective masses in silicon 〈 100 〉 nanowires
- Christian Tuma
- Alessandro Curioni
- 2010
- Applied Physics Letters
PaperPhase formation and thermal stability of ultrathin nickel-silicides on Si(100)
- K. De Keyser
- C. Van Bockstael
- et al.
- 2010
- Applied Physics Letters
PaperIn situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers
- Katherine Saenger
- James C. Tsang
- et al.
- 2010
- Applied Physics Letters
PaperInfluence of Sn Migration on phase transition in GeTe and Ge2 Se3 thin films
- Archana Devasia
- Santosh Kurinec
- et al.
- 2010
- Applied Physics Letters
PaperPhysical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles
- Takashi Ando
- Matt Copel
- et al.
- 2010
- Applied Physics Letters
Paper