The interface transport properties of Ge-GaAs heterojunctions
- L Esaki
- W.E Howard
- et al.
- 1964
- Surface Science
Publications
24853 results for Exploratory Science
Incorporation of Zinc in Vapor Grown Gallium Arsenide
- V.J. Silvestri
- F. Fang
- 1964
- JES
Behavior of CdS thin film transistors
- M.G. Miksic
- E.S. Schlig
- et al.
- 1964
- Solid-State Electronics
Operation of the Cryogenic Continuous Film Memory Cell
- J.D. Barnard
- R.H. Blumberg
- et al.
- 1964
- Proceedings of the IEEE
Effect of temperature on the stimulated emission from GaAs p-n junctions
- M.H. Pilkuhn
- H. Rupprecht
- et al.
- 1964
- Solid-State Electronics
Upper Bounds for Fixed-Weight Codes of Specified Minimum Distance
- C. Freiman
- 1964
- IEEE Trans. Inf. Theory
Doping of Alkaline Earth Halide Single Crystals
- P.F. Weller
- J.E. Scardefield
- 1964
- JES
Static grounds for inequalities in finite strain of elastic materials
- C. Truesdell
- R.A. Toupin
- 1963
- Archive for Rational Mechanics and Analysis
Testable conditions for triads of paired comparison choices
- H.William Morrison
- 1963
- Psychometrika
Asymptotic stability of a time-delayed diffusion system
- P. Keng Chieh Wang
- 1963
- Journal of Applied Mechanics, Transactions ASME