A study of channel avalanche breakdown in scaled n-mosfet’s
- Steven E. Laux
- Fritz H. Gaensslen
- 1987
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
The Potential of Complementary Heterostructure FET IC's
- Richard A. Kiehl
- W. Michael Kwapien
- et al.
- 1987
- IEEE T-ED
PaperMethodology for Bipolar Process Diagnosis and Its Application to Advanced Self-Aligned Bipolar Transistors
- G.P. Li
- E. Hackbarth
- et al.
- 1987
- IEEE T-ED
PaperOn the Punchthrough Characteristics of Advanced Self-Aligned Bipolar Transistors
- C.T. Chuang
- Denny Duan-Lee Tang
- 1987
- IEEE T-ED
PaperSubmicrometer-Channel CMOS for Low-Temperature Operation
- Jack Yuan-Chen Sun
- Yuan Taur
- et al.
- 1987
- IEEE T-ED
PaperIIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO2
- J. Li
- J. Batey
- et al.
- 1987
- IEEE T-ED
PaperVIA-8 High-Performance GaInAs Interdigitated-Metal-Semiconductor-Metal (IMSM) 1.3-µm Photodetector Grown on a GaAs Substrate
- D.L. Rogers
- J. Woodall
- et al.
- 1987
- IEEE T-ED
PaperVA-6 Investigation of Stress Effects on the DC Characteristics of GaAs MESFET's Through the Use of Externally Applied Loads
- T.N. Jackson
- Jean-Claude Ramirez
- et al.
- 1987
- IEEE T-ED
PaperIIA-2 Saturable Charge FET
- P. Solomon
- D.J. Frank
- et al.
- 1987
- IEEE T-ED
PaperAn Advanced High-Performance Trench-Isolated Self-Aligned Bipolar Technology
- G.P. Li
- Tak H. Ning
- et al.
- 1987
- IEEE T-ED
Paper