Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon
- M.O. Aboelfotoh
- H.M. Tawancy
- et al.
- 1987
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
PaperEffect of hydrogen on electromigration and 1/f noise in gold films
- K.P. Rodbell
- P.J. Ficalora
- et al.
- 1987
- Applied Physics Letters
PaperCharacterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization
- L. Krusin-Elbaum
- M. Wittmer
- et al.
- 1987
- Applied Physics Letters
PaperOxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters
PaperLaser photoablation processes in organosilane thin films
- E.E. Marinero
- R.D. Miller
- 1987
- Applied Physics Letters
PaperSpatial variation of the observed energy gap in granular superconducting NbN films
- J.R. Kirtley
- S.I. Raider
- et al.
- 1987
- Applied Physics Letters
PaperTunneling and transverse wave vector conservation in GaAs/AlGaAs heterostructures
- John A. Lebens
- Robert H. Silsbee
- et al.
- 1987
- Applied Physics Letters
PaperField-assisted bonding below 200°C using metal and glass thin-film interlayers
- W.-Y. Lee
- F.O. Sequeda
- et al.
- 1987
- Applied Physics Letters
PaperOn the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2
- F.A. Houle
- 1987
- Applied Physics Letters
Paper