Oriented growth of ultrathin tungsten films on sapphire substrates
- J.H. Souk
- Armin Segmüller
- et al.
- 1987
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Generation and annealing of defects in silicon dioxide
- A. Reisman
- C.K. Williams
- et al.
- 1987
- Journal of Applied Physics
PaperWSi0.11 Schottky gates for GaAs metal semiconductor field-effect transistors
- A.C. Callegari
- G.D. Spiers
- et al.
- 1987
- Journal of Applied Physics
PaperLocalized epitaxial growth of ReSi2 on (111) and (001) silicon
- J.J. Chu
- L.J. Chen
- et al.
- 1987
- Journal of Applied Physics
PaperKinetics of laser-induced chemical vapor deposition of gold
- T.T. Kodas
- T.H. Baum
- et al.
- 1987
- Journal of Applied Physics
PaperOptical self-regulation during laser-induced oxidation of copper
- L. Baufay
- F.A. Houle
- et al.
- 1987
- Journal of Applied Physics
PaperEffect of interface states on the electrical properties of W, WSi x, and WAlx Schottky contacts on GaAs
- A.C. Callegari
- D. Ralph
- et al.
- 1987
- Journal of Applied Physics
PaperElectrical transport properties of transition-metal disilicide films
- F. Nava
- K.N. Tu
- et al.
- 1987
- Journal of Applied Physics
PaperNonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
- E.D. Marshall
- B. Zhang
- et al.
- 1987
- Journal of Applied Physics
PaperIn situ resistivity measurement of cobalt silicide formation
- G. Ottaviani
- K.N. Tu
- et al.
- 1987
- Journal of Applied Physics
Paper