Integrated RF and microwave components in BiCMOS technology
- Joachim N. Burghartz
- Mehmet Soyuer
- et al.
- 1996
- IEEE Transactions on Electron Devices
Paper
Publications
139 results at IEEE Transactions on Electron Devices
Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance
- Keith A. Jenkins
- Joachim N. Burghartz
- et al.
- 1996
- IEEE Transactions on Electron Devices
PaperDevice parameter optimization for reduced short channel effects in retrograde doping MOSFET
- Bhavna Agrawal
- K. De Vivek
- et al.
- 1996
- IEEE Transactions on Electron Devices
PaperNeed for critical assessment
- Rolf Landauer
- 1996
- IEEE Transactions on Electron Devices
PaperSilicon Bipolar Device Structures for Digital Applications: Technology Trends and Future Directions
- James D. Warnock
- 1995
- IEEE Transactions on Electron Devices
PaperSi/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
PaperSi/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
PaperData Storage in NOS: Lifetime and Carrier-to-Noise Measurements
- Bruce D. Terris
- Robert C. Barrett
- 1995
- IEEE Transactions on Electron Devices
PaperNoise Performance of Si/Si1-xGex FET's
- A.F.M. Anwar
- Kuo-Wei Liu
- et al.
- 1995
- IEEE Transactions on Electron Devices
PaperA Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part I—Concept, Fabrication Process, and Characterization
- Joachim N. Burghartz
- Robert C. McIntosh
- et al.
- 1994
- IEEE Transactions on Electron Devices
Paper