Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
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123 results for Yu Zhu
High-frequency, scaled graphene transistors on diamond-like carbon
- Yanqing Wu
- Yu-Ming Lin
- et al.
- 2011
- Nature
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
Critical BEOL aspects of the fabrication of a thermally-assisted MRAM device
- E.J. O'sullivan
- Daniel C. Edelstein
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Reliability benefits of a metallic liner in confined PCM
- Wanki Kim
- S. Kim
- et al.
- 2018
- IRPS 2018
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Low-current spin transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-TSA 2017
Low-current Spin Transfer Torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2017
- VLSI-DAT 2017