Magnetic field dependence of resonant tunneling in thin metal-oxide-semiconductor structuresA. HartsteinR.H. Koch1987Physical Review B
Universal conductance fluctuations in narrow Si accumulation layersS.B. KaplanA. Hartstein1986Physical Review Letters
Resonant tunneling via localized states in thin MOS structuresA. HartsteinR.H. Koch1986Surface Science
Magnetoconductance of pinched silicon accumulation layersS.B. KaplanA. Hartstein1986Physical Review B
Absence of a Coulomb gap in a two-dimensional impurity bandG. TimpA.B. Fowleret al.1986Physical Review B
Evidence for resonant tunneling of electrons via sodium ions in silicon dioxideR.H. KochA. Hartstein1985Physical Review Letters
Origin of the Peaked Structure in the Conductance of One-Dimensional Silicon Accumulation LayersR.A. WebbA. Hartsteinet al.1985Physical Review Letters
TEMPERATURE AND ELECTRIC FIELD DEPENDENCE OF HOPPING CONDUCTION IN A TWO DIMENSIONAL IMPURITY BAND.G. TimpA.B. Fowleret al.1984ICPS Physics of Semiconductors 1984