Min Yang, Jeremy Schaub, et al.
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Paper
Resonant tunneling via localized states in thin MOS structures
Abstract
MOSFET samples were fabricated with Na+ ions in the gate oxide. Large peaks in the tunneling conductivity through the oxide were observed which are interpreted as resonant tunneling of electrons via the localized Na+ impurities. The localized sites are believed to arise from Na+ decoration of intrinsic defects in the oxide. © 1986.
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