Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors
- F.J. Feigl
- R. Gale
- et al.
- 1984
- Nuclear Inst. and Methods in Physics Research, B
Paper
Publications
6 results for F.J. Feigl
Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors
- R. Gale
- F.J. Feigl
- et al.
- 1983
- Journal of Applied Physics
PaperReduction of electron trapping in silicon dioxide by high-temperature nitrogen anneal
- S.K. Lai
- D.R. Young
- et al.
- 1981
- Journal of Applied Physics
PaperThe effects of water on oxide and interface trapped charge generation in thermal SiO2 films
- F.J. Feigl
- D.R. Young
- et al.
- 1981
- Journal of Applied Physics
PaperCapture and emission of electrons at 2.4-eV-deep trap level in SiO2 films
- D.J. DiMaria
- F.J. Feigl
- et al.
- 1975
- Physical Review B
PaperPhotocurent spectroscopy in thin-film insulators: Voltage dependence of the external-circuit current
- D.J. Dimaria
- F.J. Feigl
- 1974
- Physical Review B
Paper