E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
An analytical model for trapping-state photodepopulation measurements in conductor-thin-film-insulator-conductor structures is presented. The external-circuit-current dependence on applied voltage is determined, and it is shown that moments of the spatial distribution of trapped charge in the insulator can be extracted from collected-charge versus applied-field characteristic curves. The photodepopulation technique is compared with more widely used differential-capacitance and phtoemission-current techniques. © 1974 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics