G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
An analytical model for trapping-state photodepopulation measurements in conductor-thin-film-insulator-conductor structures is presented. The external-circuit-current dependence on applied voltage is determined, and it is shown that moments of the spatial distribution of trapped charge in the insulator can be extracted from collected-charge versus applied-field characteristic curves. The photodepopulation technique is compared with more widely used differential-capacitance and phtoemission-current techniques. © 1974 The American Physical Society.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
E. Burstein
Ferroelectrics
R. Ghez, M.B. Small
JES