Properties of SiO2 Grown in the Presence of HCl or Cl2
- Y.J. van der Meulen
- C.M. Osburn
- et al.
- 2019
- JES
Paper
Publications
22 results for C.M. Osburn
Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes
- C.M. Osburn
- E. Bassous
- 2019
- JES
PaperProperties of AI2O3 Films Deposited from the AICI3, CO2, and H2 System
- V.J. Silvestri
- C.M. Osburn
- et al.
- 2019
- JES
PaperElimination of End-of-Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation
- G.A. Rozgonyi
- 2019
- JES
PaperElectron trapping at positively charged centers in SiO2
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Applied Physics Letters
PaperThreshold instability in IGFET's due to emission of leakage electrons from silicon substrate into silicon dioxide
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Applied Physics Letters
PaperEmission probability of hot electrons from silicon into silicon dioxide
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Journal of Applied Physics
PaperAuger analysis of chlorine in "hCl- or Cl2-grown" SiO2 films
- N.J. Chou
- C.M. Osburn
- et al.
- 2003
- Applied Physics Letters
Paper1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
Paper1 µm MOSFET VLSI Technology: Part 1-An Overview
- Hwa-Nien Yu
- Arnold Reisman
- et al.
- 1979
- IEEE T-ED
Paper