Range distribution of implanted ions in SiO2, Si 3N4, and Al2O3
- W.K. Chu
- B.L. Crowder
- et al.
- 2003
- Applied Physics Letters
Paper
Publications
31 results for W.K. Chu
Identification of the dominant diffusing species in silicide formation
- W.K. Chu
- H. Kraütle
- et al.
- 2003
- Applied Physics Letters
PaperTransient diffusion of boron implanted in SI along random and channeling directions
- W.K. Chu
- M. Numan
- et al.
- 1989
- Nuclear Inst. and Methods in Physics Research, B
PaperAnomalous diffusion of boron implanted into silicon along the [100] direction
- Alwin E. Michel
- M. Numan
- et al.
- 1988
- Applied Physics Letters
PaperChanneling studies of Ge-GaAs superlattices grown by molecular beam epitaxy
- Chin-An Chang
- Wei-Kan Chu
- 1983
- Applied Physics Letters
PaperSuperlattice interface and lattice strain measurement by ion channeling
- W.K. Chu
- C.K. Pan
- et al.
- 1983
- Physical Review B
PaperNiSi formation at the silicide/Si interface on the NiPt/Si system
- G. Ottaviani
- K.N. Tu
- et al.
- 1982
- Journal of Applied Physics
PaperIon-beam crystallography of InAs-GaSb superlattices
- W.K. Chu
- F.W. Saris
- et al.
- 1982
- Physical Review B
PaperPulsed ion beam irradiation of silicon
- W.K. Chu
- S. Mader
- et al.
- 1982
- Nuclear Instruments and Methods
PaperPulsed proton beam annealing: Semiconductors and silicides
- J.E.E. Baglin
- R.T. Hodgson
- et al.
- 1981
- Nuclear Instruments and Methods
Paper