E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the [110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly. © 1983 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Mark W. Dowley
Solid State Communications