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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the [110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly. © 1983 The American Physical Society.
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