Ion-beam crystallography of InAs-GaSb superlattices

(100)-oriented InAs-GaSb superlattices have been investigated with the use of high-energy helium backscattering and channeling. Oscillatory structure on the backscattering spectra confirm the existence of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 110 directions than along the [100] growth direction. An interface relaxation and contraction model based on average bond-length changes at the interface is proposed and discussed. © 1982 The American Physical Society.