Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
Conference paper
Publications
28 results for S. Mader
New technology for bipolar emitters in the deep sub-micron range
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1989
- VLSI Technology 1989
Conference paperSelective Epitaxial Refill for In-Trench Device Fabrication
- J.N. Burghartz
- J. Warnock
- et al.
- 1989
- Electronics Letters
PaperSelective epitaxy base for bipolar transistors
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- ESSDERC 1988
Conference paperSelective Epitaxy Base Transistor (SEBT)
- J.N. Burghartz
- B.J. Ginsberg
- et al.
- 1988
- IEEE Electron Device Letters
PaperElectrical characteristics of diodes fabricated in selective-epitaxial silicon wells
- David Harame
- Barry Ginsberg
- et al.
- 1987
- Solid State Electronics
PaperTransient enhanced diffusion in arsenic-implanted short time annealed silicon
- R. Kalish
- T.O. Sedgwick
- et al.
- 1984
- Applied Physics Letters
PaperThe poly-single crystalline silicon interface
- C.Y. Wong
- Alwin E. Michel
- et al.
- 1984
- Journal of Applied Physics
PaperChanneling in low energy boron ion implantation
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1984
- Applied Physics Letters
PaperSHORT TIME ANNEALING OF As AND B ION IMPLANTED Si USING TUNGSTEN-HALOGEN LAMPS.
- T.O. Sedgwick
- R. Kalish
- et al.
- 1983
- MRS Proceedings 1983
Conference paper