Publications

28 results for S. Mader

New technology for bipolar emitters in the deep sub-micron range
- - J.N. Burghartz
  - B.J. Ginsberg
  - et al.
- 1989
- VLSI Technology 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- - J.N. Burghartz
  - S. Mader
  - et al.
- 1989
- IEDM 1989
Selective Epitaxial Refill for In-Trench Device Fabrication
- - J.N. Burghartz
  - J. Warnock
  - et al.
- 1989
- Electronics Letters
Selective epitaxy base for bipolar transistors
- - J.N. Burghartz
  - B.J. Ginsberg
  - et al.
- 1988
- ESSDERC 1988
Selective Epitaxy Base Transistor (SEBT)
- - J.N. Burghartz
  - B.J. Ginsberg
  - et al.
- 1988
- IEEE Electron Device Letters
Electrical characteristics of diodes fabricated in selective-epitaxial silicon wells
- - David Harame
  - Barry Ginsberg
  - et al.
- 1987
- Solid State Electronics
Transient enhanced diffusion in arsenic-implanted short time annealed silicon
- - R. Kalish
  - T.O. Sedgwick
  - et al.
- 1984
- Applied Physics Letters
Channeling in low energy boron ion implantation
- - Alwin E. Michel
  - R.H. Kastl
  - et al.
- 1984
- Applied Physics Letters
The poly-single crystalline silicon interface
- - C.Y. Wong
  - Alwin E. Michel
  - et al.
- 1984
- Journal of Applied Physics
DEFECTS IN SILICON FILMS GROWN BY EPITAXIAL LATERAL OVERGROWTH.
- - B.J. Ginsberg
  - M. Arienzo
  - et al.
- 1983
- ECS Meeting 1983