In1-xGaxAs-GaSb1-yAsy heterojunctions by molecular beam epitaxy
- H. Sakaki
- L.L. Chang
- et al.
- 2008
- Applied Physics Letters
Paper
Publications
87 results for R. Ludeke
Molecular-beam epitaxy (MBE) of In1-xGaxAs and GaSb1-yAsy
- Chin-An Chang
- R. Ludeke
- et al.
- 2008
- Applied Physics Letters
PaperObservation of semiconductor-semimetal transition in InAs-GaSb superlattices
- L.L. Chang
- N. Kawai
- et al.
- 2008
- Applied Physics Letters
PaperIon backscattering and channeling study of InAs-GaSb superlattices
- F.W. Saris
- W.K. Chu
- et al.
- 2008
- Applied Physics Letters
PaperPotential imaging of Si/HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
- R. Ludeke
- V. Narayanan
- et al.
- 2005
- Applied Physics Letters
PaperElectrostatic field and partial fermi level pinning at the pentacene-SiO 2 interface
- Liwei Chen
- R. Ludeke
- et al.
- 2005
- Journal of Physical Chemistry B
PaperSurface potential and morphology issues of annealed (HfO 2) x(SiO 2) 1-x gate oxides
- R. Ludeke
- P. Lysaght
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Conference paperStructural and surface potential characterization of annealed HfO 2 and (HfO 2) x(SiO 2) 1-x films
- R. Ludeke
- E. Gusev
- 2004
- Journal of Applied Physics
PaperTunable GaAs laser in an external dispersive cavity
- R. Ludeke
- E.P. Harris
- 2003
- Applied Physics Letters
PaperMolecular beam epitaxy of alternating metal-semiconductor films
- R. Ludeke
- L.L. Chang
- et al.
- 2003
- Applied Physics Letters
Paper